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Laser Scanning Defect Mapping System

Model : LSD4

LSD4 system can help users improve their manufacturing process by using laser scanning defect mapping system.

Items Descriptions
Excitation Source a. 405±1 nm (can extend to 4 excitation sources).
b. Max. output power:200 mW.
c. Stability <2% (4 hr)
d. Multi-wavelength automatic switching design
e. Microcontroller board for multi-laser heads control.
f. Wavelength selection and output power can be controlled by software.
Laser Spot Size a. TEM00.
b. Min. spot size: <40 um
Scan Area a. Scan area:  ≧16 cm x 16 cm
b. Scan area can be customized
Mapping Resolution a. Resolution: ≦40 um
b. Mapping resolution can be setup through the software
Current Range 1 uA to 10 mA
Spatial Resolution 40 micron
Measurement module a. 16 bit A/D resolution ability
b. S/N >1000
c. Ultra-low noise amplifier module
Software a. Excitation wavelength switch function
b. Excitation power adjustment function
c. LBIC 3D display
d. 2D profile analysis (electrode depth to width ratio)
e. Distribution analysis of photocurrent response (can be equipped with long wavelength range excitation source)
f. Data saved and export function
Computer System a. IPC
b. Windows operation system
Options 1: Laser Source a. DPSS 650±1 nm (can extend to 4 excitation sources)
b. Max. output power: 200 mW
c. Stability <2% (4 hr)
d. Beam diameter: <1.3 mm
e. Wavelength combiner optics kits
Options 2: Laser Source a. Diode laser 850±1 nm (can extend to 4 excitation sources)
b. Max. output power: 200 mW
c. Stability <2% (4 hr)
d. Beam diameter: <1.3 mm
e. Wavelength combiner optics kits
Options 3: Laser Source a. Diode laser 980±1 nm (can extend to 4 excitation sources)
b. Max. output power: 200 mW
c. Stability <2% (4 hr)
d. Beam diameter: <1.3 mm
e. Wavelength combiner optics kits

LSD4 system can help users improve their manufacturing process by using laser scanning defect mapping system.

● Can scan the photocurrent distribution of the sample surface. 
● Can scan the open-circuit voltage and short-circuit current distribution.
● Can analyze the surface dust of the solar cell.
● Can analyze the short-circuit area.
● Can recognize and analyze the defects.
● Can analyze the diffusion length of minority carrier (Optional function).
● PV Response Mapping (can equip with white light excitation source (optional function).
￭ Si solar cells applications
▲Fig. 1) 2 cm x 2 cm Si solar cell mapping

▲Fig. 2) 6-inch Mono-Si cell mapping

▲Fig. 3) 6-inch Poly-Si cell solar cell mapping


￭ OPV and Perovskite solar cells applications 
▲Fig. 4) OPV mapping

￭ Uniformity analysis
 
▲Fig. 5) Non-uniformity analysis (Resolution: 50 um)

▲Fig. 6) Busbar/Grid depth-width ratio

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