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Laser Scanning Defect Mapping System
LSD4 system can help users improve their manufacturing process by using laser scanning defect mapping system.
Items | Descriptions |
---|---|
Excitation Source |
a. 405±1 nm (can extend to 4 excitation sources). b. Max. output power:200 mW. c. Stability <2% (4 hr) d. Multi-wavelength automatic switching design e. Microcontroller board for multi-laser heads control. f. Wavelength selection and output power can be controlled by software. |
Laser Spot Size |
a. TEM00. b. Min. spot size: <40 um |
Scan Area |
a. Scan area: ≧16 cm x 16 cm b. Scan area can be customized |
Mapping Resolution |
a. Resolution: ≦40 um b. Mapping resolution can be setup through the software |
Current Range |
1 uA to 10 mA |
Spatial Resolution |
40 micron |
Measurement module |
a. 16 bit A/D resolution ability b. S/N >1000 c. Ultra-low noise amplifier module |
Software |
a. Excitation wavelength switch function b. Excitation power adjustment function c. LBIC 3D display d. 2D profile analysis (electrode depth to width ratio) e. Distribution analysis of photocurrent response (can be equipped with long wavelength range excitation source) f. Data saved and export function |
Computer System |
a. IPC b. Windows operation system |
Options 1: Laser Source |
a. DPSS 650±1 nm (can extend to 4 excitation sources) b. Max. output power: 200 mW c. Stability <2% (4 hr) d. Beam diameter: <1.3 mm e. Wavelength combiner optics kits |
Options 2: Laser Source |
a. Diode laser 850±1 nm (can extend to 4 excitation sources) b. Max. output power: 200 mW c. Stability <2% (4 hr) d. Beam diameter: <1.3 mm e. Wavelength combiner optics kits |
Options 3: Laser Source |
a. Diode laser 980±1 nm (can extend to 4 excitation sources) b. Max. output power: 200 mW c. Stability <2% (4 hr) d. Beam diameter: <1.3 mm e. Wavelength combiner optics kits |
▲Fig. 2) 6-inch Mono-Si cell mapping
Coming soon!